SI5456DU-T1-GE3 Datasheet
SI5456DU-T1-GE3 Datasheet
Total Pages: 7
Size: 102.02 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI5456DU-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 10V FET Feature - Power Dissipation (Max) 3.1W (Ta), 31W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-PowerPak® ChipFet (3x1.9) Package / Case 8-PowerVDFN |
