SI4941EDY-T1-E3 Datasheet
SI4941EDY-T1-E3 Datasheet
Total Pages: 7
Size: 130.27 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI4941EDY-T1-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A Rds On (Max) @ Id, Vgs 21mOhm @ 8.3A, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 3.6W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
