SI4511DY-T1-GE3 Datasheet
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7.2A, 4.6A Rds On (Max) @ Id, Vgs 14.5mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7.2A, 4.6A Rds On (Max) @ Id, Vgs 14.5mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
