SI4505DY-T1-GE3 Datasheet
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V, 8V Current - Continuous Drain (Id) @ 25°C 6A, 3.8A Rds On (Max) @ Id, Vgs 18mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V, 8V Current - Continuous Drain (Id) @ 25°C 6A, 3.8A Rds On (Max) @ Id, Vgs 18mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
