SI4447DY-T1-GE3 Datasheet
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 15V, 10V Rds On (Max) @ Id, Vgs 72mOhm @ 4.5A, 15V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 805pF @ 20V FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 15V, 10V Rds On (Max) @ Id, Vgs 72mOhm @ 4.5A, 15V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 805pF @ 20V FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
