SI4425FDY-T1-GE3 Datasheet
SI4425FDY-T1-GE3 Datasheet
Total Pages: 9
Size: 237.44 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI4425FDY-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 18.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) +16V, -20V Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 15V FET Feature - Power Dissipation (Max) 2.3W (Ta), 4.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
