SI4340DY-T1-E3 Datasheet
SI4340DY-T1-E3 Datasheet
Total Pages: 10
Size: 143.32 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI4340DY-T1-E3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7.3A, 9.9A Rds On (Max) @ Id, Vgs 12mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.14W, 1.43W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 14-SOIC (0.154", 3.90mm Width) Supplier Device Package 14-SOIC |
