SI4276DY-T1-E3 Datasheet
SI4276DY-T1-E3 Datasheet
Total Pages: 14
Size: 227.94 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI4276DY-T1-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8A Rds On (Max) @ Id, Vgs 15.3mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 15V Power - Max 3.6W, 2.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
