SI3585CDV-T1-GE3 Datasheet
SI3585CDV-T1-GE3 Datasheet
Total Pages: 16
Size: 254.43 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI3585CDV-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.9A, 2.1A Rds On (Max) @ Id, Vgs 58mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 10V Power - Max 1.4W, 1.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |
