SI3483DDV-T1-GE3 Datasheet
SI3483DDV-T1-GE3 Datasheet
Total Pages: 9
Size: 217.62 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI3483DDV-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6.4A (Ta), 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 31.2mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V Vgs (Max) +16V, -20V Input Capacitance (Ciss) (Max) @ Vds 580pF @ 15V FET Feature - Power Dissipation (Max) 2W (Ta), 3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |
