SI3440ADV-T1-GE3 Datasheet
SI3440ADV-T1-GE3 Datasheet
Total Pages: 11
Size: 270.98 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI3440ADV-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 380mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 80pF @ 75V FET Feature - Power Dissipation (Max) 3.6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |
