SI2392DS-T1-GE3 Datasheet
SI2392DS-T1-GE3 Datasheet
Total Pages: 10
Size: 239.93 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI2392DS-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 126mOhm @ 2A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 196pF @ 50V FET Feature - Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
