SI2334DS-T1-GE3 Datasheet
SI2334DS-T1-GE3 Datasheet
Total Pages: 10
Size: 235.82 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI2334DS-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 44mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 634pF @ 15V FET Feature - Power Dissipation (Max) 1.3W (Ta), 1.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
