SI2318CDS-T1-GE3 Datasheet
SI2318CDS-T1-GE3 Datasheet
Total Pages: 10
Size: 237.93 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI2318CDS-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 42mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 340pF @ 20V FET Feature - Power Dissipation (Max) 1.25W (Ta), 2.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
