SI2304DS Datasheet
SI2304DS Datasheet
Total Pages: 13
Size: 368.32 KB
Nexperia
This datasheet covers 1 part numbers:
SI2304DS,215
|
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 117mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 195pF @ 10V FET Feature - Power Dissipation (Max) 830mW (Tc) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |
