SI1912EDH-T1-E3 Datasheet
SI1912EDH-T1-E3 Datasheet
Total Pages: 6
Size: 115.48 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI1912EDH-T1-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.13A Rds On (Max) @ Id, Vgs 280mOhm @ 1.13A, 4.5V Vgs(th) (Max) @ Id 450mV @ 100µA (Min) Gate Charge (Qg) (Max) @ Vgs 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 570mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 (SOT-363) |
