SI1905BDH-T1-E3 Datasheet
SI1905BDH-T1-E3 Datasheet
Total Pages: 7
Size: 105.54 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI1905BDH-T1-E3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 630mA Rds On (Max) @ Id, Vgs 542mOhm @ 580mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 62pF @ 4V Power - Max 357mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 (SOT-363) |
