SI1557DH-T1-E3 Datasheet
SI1557DH-T1-E3 Datasheet
Total Pages: 9
Size: 134.83 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI1557DH-T1-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 1.2A, 770mA Rds On (Max) @ Id, Vgs 235mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 470mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 (SOT-363) |
