SI1489EDH-T1-GE3 Datasheet
SI1489EDH-T1-GE3 Datasheet
Total Pages: 12
Size: 263.48 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI1489EDH-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 48mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 2.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-363 Package / Case 6-TSSOP, SC-88, SOT-363 |
