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SI1470DH-T1-E3 Datasheet

SI1470DH-T1-E3 Datasheet
Total Pages: 7
Size: 122.69 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SI1470DH-T1-E3
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SI1470DH-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

66mOhm @ 3.8A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 2.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363