SI1443EDH-T1-GE3 Datasheet
SI1443EDH-T1-GE3 Datasheet
Total Pages: 12
Size: 265.56 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI1443EDH-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 54mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.6W (Ta), 2.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-363 Package / Case 6-TSSOP, SC-88, SOT-363 |
