SI1303EDL-T1-E3 Datasheet
SI1303EDL-T1-E3 Datasheet
Total Pages: 6
Size: 72.68 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI1303EDL-T1-E3
![SI1303EDL-T1-E3 Datasheet Page 1](http://pneda.ltd/static/datasheets/images/23/si1303edl-t1-e3-0001.webp)
![SI1303EDL-T1-E3 Datasheet Page 2](http://pneda.ltd/static/datasheets/images/23/si1303edl-t1-e3-0002.webp)
![SI1303EDL-T1-E3 Datasheet Page 3](http://pneda.ltd/static/datasheets/images/23/si1303edl-t1-e3-0003.webp)
![SI1303EDL-T1-E3 Datasheet Page 4](http://pneda.ltd/static/datasheets/images/23/si1303edl-t1-e3-0004.webp)
![SI1303EDL-T1-E3 Datasheet Page 5](http://pneda.ltd/static/datasheets/images/23/si1303edl-t1-e3-0005.webp)
![SI1303EDL-T1-E3 Datasheet Page 6](http://pneda.ltd/static/datasheets/images/23/si1303edl-t1-e3-0006.webp)
Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 670mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 430mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 290mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-3 Package / Case SC-70, SOT-323 |