SI1078X-T1-GE3 Datasheet
SI1078X-T1-GE3 Datasheet
Total Pages: 8
Size: 218.64 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI1078X-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.02A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 142mOhm @ 1A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 110pF @ 15V FET Feature - Power Dissipation (Max) 240mW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package - Package / Case SOT-563, SOT-666 |
