SI1058X-T1-GE3 Datasheet
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 91mOhm @ 1.3A, 4.5V Vgs(th) (Max) @ Id 1.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.9nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 10V FET Feature - Power Dissipation (Max) 236mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-89-6 Package / Case SOT-563, SOT-666 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 91mOhm @ 1.3A, 4.5V Vgs(th) (Max) @ Id 1.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.9nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 10V FET Feature - Power Dissipation (Max) 236mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-89-6 Package / Case SOT-563, SOT-666 |
