SI1016X-T1-E3 Datasheet
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 485mA, 370mA Rds On (Max) @ Id, Vgs 700mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 485mA, 370mA Rds On (Max) @ Id, Vgs 700mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |
