SI1016CX-T1-GE3 Datasheet
SI1016CX-T1-GE3 Datasheet
Total Pages: 12
Size: 236.22 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI1016CX-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 396mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V Power - Max 220mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |
