SI1011X-T1-GE3 Datasheet
SI1011X-T1-GE3 Datasheet
Total Pages: 8
Size: 160.86 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SI1011X-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 640mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds 62pF @ 6V FET Feature - Power Dissipation (Max) 190mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-89-3 Package / Case SC-89, SOT-490 |
