SH8M11TB1 Datasheet
SH8M11TB1 Datasheet
Total Pages: 11
Size: 617.32 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
SH8M11TB1
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Manufacturer Rohm Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.5A Rds On (Max) @ Id, Vgs 98mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 85pF @ 10V Power - Max 2W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |
