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SDT10S60 Datasheet

SDT10S60 Datasheet
Total Pages: 8
Size: 505.18 KB
Infineon Technologies
This datasheet covers 1 part numbers: SDT10S60
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SDT10S60

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolSiC™+

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

10A (DC)

Voltage - Forward (Vf) (Max) @ If

1.7V @ 10A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

350µA @ 600V

Capacitance @ Vr, F

350pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

PG-TO220-2-2

Operating Temperature - Junction

-55°C ~ 175°C