SCT2280KEC Datasheet
SCT2280KEC Datasheet
Total Pages: 14
Size: 780.84 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
SCT2280KEC
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 364mOhm @ 4A, 18V Vgs(th) (Max) @ Id 4V @ 1.4mA Gate Charge (Qg) (Max) @ Vgs 36nC @ 18V Vgs (Max) +22V, -6V Input Capacitance (Ciss) (Max) @ Vds 667pF @ 800V FET Feature - Power Dissipation (Max) 108W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
