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SCT2160KEC Datasheet

SCT2160KEC Datasheet
Total Pages: 14
Size: 775.31 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: SCT2160KEC
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SCT2160KEC

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

208mOhm @ 7A, 18V

Vgs(th) (Max) @ Id

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 18V

Vgs (Max)

+22V, -6V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 800V

FET Feature

-

Power Dissipation (Max)

165W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3