SCT10N120 Datasheet
SCT10N120 Datasheet
Total Pages: 13
Size: 232.26 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
SCT10N120
|
Manufacturer STMicroelectronics Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 20V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 20V Vgs (Max) +25V, -10V Input Capacitance (Ciss) (Max) @ Vds 290pF @ 400V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Supplier Device Package HiP247™ Package / Case TO-247-3 |
