SCS120AGC Datasheet
Rohm Semiconductor Manufacturer Rohm Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 1.7V @ 20A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 400µA @ 600V Capacitance @ Vr, F 860pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction 175°C (Max) |
Rohm Semiconductor Manufacturer Rohm Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.7V @ 12A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 240µA @ 600V Capacitance @ Vr, F 516pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction 175°C (Max) |
Rohm Semiconductor Manufacturer Rohm Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 1.7V @ 8A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 160µA @ 600V Capacitance @ Vr, F 345pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction 175°C (Max) |
Rohm Semiconductor Manufacturer Rohm Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 6A Voltage - Forward (Vf) (Max) @ If 1.5V @ 6A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 120µA @ 600V Capacitance @ Vr, F 260pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction 175°C (Max) |
Rohm Semiconductor Manufacturer Rohm Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 200µA @ 600V Capacitance @ Vr, F 430pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction 175°C (Max) |