S29WS512R0SBHW200 Datasheet
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Manufacturer Cypress Semiconductor Corp Series WS-R Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 512Mb (32M x 16) Memory Interface Parallel Clock Frequency 104MHz Write Cycle Time - Word, Page 60ns Access Time 80ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -25°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 84-VFBGA Supplier Device Package 84-FBGA (11.6x8) |
Manufacturer Cypress Semiconductor Corp Series WS-R Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 512Mb (32M x 16) Memory Interface Parallel Clock Frequency 104MHz Write Cycle Time - Word, Page 60ns Access Time 80ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -25°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 84-VFBGA Supplier Device Package 84-FBGA (11.6x8) |
Manufacturer Cypress Semiconductor Corp Series WS-R Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 256Mb (16M x 16) Memory Interface Parallel Clock Frequency 104MHz Write Cycle Time - Word, Page 60ns Access Time 80ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -25°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 84-VFBGA Supplier Device Package 84-FBGA (11.6x8) |
Manufacturer Cypress Semiconductor Corp Series WS-R Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 256Mb (16M x 16) Memory Interface Parallel Clock Frequency 104MHz Write Cycle Time - Word, Page 60ns Access Time 80ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -25°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 84-VFBGA Supplier Device Package 84-FBGA (11.6x8) |
