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RSY160P05TL Datasheet

RSY160P05TL Datasheet
Total Pages: 6
Size: 173.32 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RSY160P05TL
RSY160P05TL Datasheet Page 1
RSY160P05TL Datasheet Page 2
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RSY160P05TL Datasheet Page 5
RSY160P05TL Datasheet Page 6
RSY160P05TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

45V

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

25.5nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2150pF @ 10V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TCPT3

Package / Case

3-SMD, Flat Leads