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RSJ650N10TL Datasheet

RSJ650N10TL Datasheet
Total Pages: 7
Size: 1,349.49 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RSJ650N10TL
RSJ650N10TL Datasheet Page 1
RSJ650N10TL Datasheet Page 2
RSJ650N10TL Datasheet Page 3
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RSJ650N10TL Datasheet Page 7
RSJ650N10TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

65A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

9.1mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10780pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LPTS

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB