RSJ10HN06TL Datasheet
RSJ10HN06TL Datasheet
Total Pages: 7
Size: 609.75 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
RSJ10HN06TL
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 202nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 10V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LPTS Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
