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RRS110N03TB1 Datasheet

RRS110N03TB1 Datasheet
Total Pages: 5
Size: 100.22 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RRS110N03TB1
RRS110N03TB1 Datasheet Page 1
RRS110N03TB1 Datasheet Page 2
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RRS110N03TB1 Datasheet Page 5
RRS110N03TB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

12.6mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)