RQA0009TXDQS#H1 Datasheet
RQA0009TXDQS#H1 Datasheet
Total Pages: 22
Size: 209.7 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
RQA0009TXDQS#H1
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 15W (Tc) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package UPAK Package / Case TO-243AA |
