RQ1E100XNTR Datasheet
RQ1E100XNTR Datasheet
Total Pages: 12
Size: 668.3 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
RQ1E100XNTR
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 10.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 12.7nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V FET Feature - Power Dissipation (Max) 550mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSMT8 Package / Case 8-SMD, Flat Lead |
