RP1E070XNTCR Datasheet
RP1E070XNTCR Datasheet
Total Pages: 7
Size: 509.76 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
RP1E070XNTCR
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 28mOhm @ 7A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 390pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MPT6 Package / Case 6-SMD, Flat Leads |
