RN1113CT(TPL3) Datasheet
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 20V Resistor - Base (R1) 47 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition - Power - Max 50mW Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package CST3 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 20V Resistor - Base (R1) 22 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition - Power - Max 50mW Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package CST3 |
