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RK7002AT116 Datasheet

RK7002AT116 Datasheet
Total Pages: 5
Size: 82.33 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RK7002AT116
RK7002AT116 Datasheet Page 1
RK7002AT116 Datasheet Page 2
RK7002AT116 Datasheet Page 3
RK7002AT116 Datasheet Page 4
RK7002AT116 Datasheet Page 5
RK7002AT116

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

1Ohm @ 300mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

33pF @ 10V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SST3

Package / Case

TO-236-3, SC-59, SOT-23-3