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RK3055ETL Datasheet

RK3055ETL Datasheet
Total Pages: 5
Size: 88.66 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RK3055ETL
RK3055ETL Datasheet Page 1
RK3055ETL Datasheet Page 2
RK3055ETL Datasheet Page 3
RK3055ETL Datasheet Page 4
RK3055ETL Datasheet Page 5
RK3055ETL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 10V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

CPT3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63