RJP020N06T100 Datasheet
RJP020N06T100 Datasheet
Total Pages: 5
Size: 899.38 KB
Rohm Semiconductor
Website: https://www.rohm.com/
This datasheet covers 1 part numbers:
RJP020N06T100
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 240mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 160pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MPT3 Package / Case TO-243AA |
