RJK60S7DPP-E0#T2 Datasheet
RJK60S7DPP-E0#T2 Datasheet
Total Pages: 8
Size: 196.64 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
RJK60S7DPP-E0#T2
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Vgs (Max) +30V, -20V Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 25V FET Feature Super Junction Power Dissipation (Max) 34.7W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
