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RJK6026DPE-00#J3 Datasheet

RJK6026DPE-00#J3 Datasheet
Total Pages: 9
Size: 117.99 KB
Renesas Electronics America
This datasheet covers 1 part numbers: RJK6026DPE-00#J3
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RJK6026DPE-00#J3

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.4Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 25V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-LDPAK

Package / Case

SC-83