RJK6025DPD-00#J2 Datasheet
RJK6025DPD-00#J2 Datasheet
Total Pages: 7
Size: 74.94 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
RJK6025DPD-00#J2
|
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 37.5pF @ 25V FET Feature - Power Dissipation (Max) 29.7W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MP-3A Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
