RJK6002DPH-E0#T2 Datasheet
RJK6002DPH-E0#T2 Datasheet
Total Pages: 7
Size: 93.37 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
RJK6002DPH-E0#T2
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.8Ohm @ 1A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 165pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
