RJK5030DPP-M0#T2 Datasheet
RJK5030DPP-M0#T2 Datasheet
Total Pages: 7
Size: 77.8 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
RJK5030DPP-M0#T2
|
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.6Ohm @ 2A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V FET Feature - Power Dissipation (Max) 28.5W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FL Package / Case TO-220-3 Full Pack |
